Radiation Shielding for CMOS APS Digital Module
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摘要: 对互补金属氧化物半导体(CMOS)有源像素传感器(APS)数字模组的辐射耐受性进行了研究,设计并制造了屏蔽加固结构。利用蒙特卡罗模拟软件对屏蔽结构的材料、挡板尺寸以及前挡板开孔孔径进行了设计和计算,并对所设计屏蔽结构的屏蔽性能,加固前后传感器模组的工作寿命以及辐射损伤模式进行了实验研究。实验结果表明:所设计屏蔽结构能够使APS的工作寿命提高约1倍;屏蔽后,主板的受照剂量率约为无屏蔽时的1/3,但其工作寿命仅提高约1倍,这可能是由于模组上各器件的耐辐射性能以及受照剂量存在差异导致的;当辐照总剂量小于50 Gy时暗电流几乎无变化,当总剂量大于150 Gy后APS各像素的暗电流逐渐增大。
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关键词:
- 互补金属氧化物半导体(CMOS) /
- 有源像素传感器(APS) /
- 数字模组 /
- 辐射耐受性 /
- 屏蔽加固
Abstract: The study on the radiation resistance of complementary metal oxide semiconductor（CMOS） active pixel sensor（APS） digital module are presented, and a shielding structure has been designed and manufactured with the help of Monte Carlo simulation software. Shielding performance, operating life and damage modes of sensor modules have been analyzed. The result shows that with the shielding, the operating life of APS almost doubled. The irradiation dose rate is about 1/3 times of that without shielding when the main board is shielded, but the service life of the main board is only increased by 1 times after shielding. This may be originated from the differences in the radiation resistance and total ionizing dose of the devices on the module. The dark current is almost unchanged when the total dose is less than 50 Gy, and the dark current of all pixels in the sensors increases gradually when the total dose is greater than 150 Gy. -
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