辐照温度对反应堆压力容器材料辐照脆化行为的影响规律研究

董元元; 罗英; 杜华; 胡甜; 王晓童

doi:10.13832/j.jnpe.2024.S2.0102

辐照温度对反应堆压力容器材料辐照脆化行为的影响规律研究

doi: 10.13832/j.jnpe.2024.S2.0102

中国核动力研究设计院核反应堆系统设计技术重点实验室，成都，610213

详细信息

作者简介:
董元元（1989—），男，博士研究生，现从事反应堆结构、老化管理等方面研究，E-mail：sshuimus@163.com

中图分类号: TL341
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- 被引次数: 0
出版历程
- 收稿日期: 2024-06-13
- 修回日期: 2024-11-10
- 刊出日期: 2025-01-06

Study on Irradiation Temperature Impact on Irradiation Embrittlement Behavior of RPV Material

Science and Technology on Reactor System Design Technology Laboratory, Nuclear Power Institute of China, Chengdu, 610213, China

摘要

摘要: 反应堆压力容器（RPV）承受着强烈的中子辐照作用，随着快中子注量的累积，RPV产生不可忽视的辐照损伤，其中辐照温度是影响其辐照损伤的重要因素之一。针对辐照温度对RPV的影响机理研究，本文开展了现有预测模型分析、原位离子模拟辐照试验及多尺度模拟计算。对比分析了常用的辐照脆化预测公式，其温度适用范围为275~310℃，不适用于低温辐照条件。开展了不同温度下的原位离子辐照试验，结果表明辐照温度越高，辐照位错环尺寸越大而密度越低。多尺度模拟计算结果表明，辐照温度对辐照点缺陷的产生过程影响不明显，但对辐照缺陷的演化和平衡过程具有较明显的影响；辐照温度越低，材料辐照脆化越严重。研究揭示了辐照温度对RPV材料辐照脆化行为的影响机理及规律。
- 反应堆压力容器（RPV）材料 /
- 辐照温度 /
- 辐照脆化 /
- 原位离子辐照 /
- 多尺度模拟计算
Abstract: Reactor Pressure Vessel (RPV) suffers strong neutron radiation, which induces significant irradiation damage for RPV with the dose accumulation, and irradiation temperature is one of the key factors affecting its irradiation damage. However, at present, the research on the mechanism of irradiation temperature is insufficient. Aiming at the above problems, the existing prediction model analysis, in-situ ion simulated irradiation test and multi-scale simulation calculation are carried out. The temperature range of commonly used radiation embrittlement prediction formula is 275~310°C, which isn't applicable for low irradiation temperature condition. In-situ ion irradiation tests at different temperatures are conducted. The results show that the sizes of irradiated dislocation loops increase and the densities decrease with the increase of irradiation temperature. The results of multi-scale simulation show that the irradiation temperature has no obvious influence on the generation process of irradiation defects, but has obvious influence on the evolution and stabilization of irradiation defects. The lower the irradiation temperature, the more serious the embrittlement of materials is. The study reveals the mechanism and law of the influence of irradiation temperature on the radiation embrittlement behavior of RPV material.
- RPV material /
- Irradiation temperature /
- Irradiation embrittlement /
- In-situ ion irradiation /
- Multi-scale simulation

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图 1 未辐照样品析出相及位错情况

Figure 1. Precipitates and Dislocations Distribution in Unirradiated Sample

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图 2 未辐照样品位错攀移及针状析出相

Figure 2. Climb of Dislocations and Acicular Precipitates of Unirradiated Sample

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图 3 辐照位错随辐照剂量增加的演化行为

Figure 3. Evolution Behavior of Irradiated Dislocations with Increasing Irradiation Dose

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图 4 辐照位错环形核率及大位错环A的尺寸随剂量变化曲线

Figure 4. Curve of Nucleation Rate of Irradiated Dislocation Loops and Size of Loop A with Irradiation Dose

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图 5 不同温度下辐照位错环平均尺寸随辐照剂量的变化曲线

Figure 5. Curve of Average Sizes of Irradiated Dislocation Loops with Irradiation Dose at Different Temperatures

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图 6 不同温度下辐照位错环面密度随辐照剂量的变化曲线

Figure 6. Curve of Surface Densities of Irradiated Dislocation Loops with Irradiation Dose at Different Temperatures

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图 7 辐照位错环尺寸分布

Figure 7. Size Distribution of Irradiated Dislocation Loops

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图 8 FP数量随时间的变化规律

Figure 8. Curve of FP Numbers with Time

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图 9 辐照位错环尺寸演化曲线

Figure 9. Curves of Sizes of Irradiated Dislocation Loops with Temperature

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图 10 辐照位错环密度演化曲线

Figure 10. Curves of Densities of Irradiated Dislocation Loops with Temperature

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图 11 未辐照RPV材料的断裂韧性主曲线

Figure 11. Fracture Toughness Master Curve of Unirradiated RPV Material

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图 12 辐照后RPV材料的断裂韧性曲线

Figure 12. Fracture Toughness Master Curve of Irradiated RPV Material

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表 1 RPV材料主要化学成分　

Table 1. Main Chemical Composition of RPV Material　

化学元素	C	Mn	Si	P	S	Cr	Ni	Mo	Cu	Co
含量/wt%	0.16~0.22	1.20~ 1.60	0.10~ 0.30	≤0.006	≤0.005	≤0.15	0.50~ 0.80	0.43~ 0.57	≤0.05	≤0.02

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表 2 辐照缺陷间的相互反应

Table 2. Interaction between Irradiation Defects

间隙原子与空位的复合	I₁ + V₁ → 0
	I_m + V_i → V_i-m
	I_g + V_i → V_i-g
	V_m + I_i → I_i-m
间隙原子或空位的聚集	I_m + I_m→I_m+m
	I_m+I_i→I_m+i
	I_g + I_g→I_g+g
	I_g + I_i →I_g+i
	V_m+V_m→V_m+m
	V_m+V_i→V_m+i
可移动缺陷淹没在缺陷阱上	I_m+S →S
	V_m+S →S
	I_g+S →S

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