Measurement of Radiation Damage Constant about Bipolar Transistor of CFBR-Ⅱ
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摘要: 为获取CFBR-II堆与其他装置建立辐射损伤等效系数的实验依据,在CFBR-II堆稳态工况下开展典型三极管的辐射损伤常数测定工作。结果表明,硅三极管的辐射损伤常数在4×10-16～6×10-16 cm2之间;对于直流增益与中子注量的线性关系的适用范围,集电极注入电流可以拓展到300 mA。Abstract: This paper describes the measurement of radiation damage constant of typical bipolar transistor of CFBR-II in a steady state,in order to acquire the radiation damage equivalent coefficient between CFBR-II and the others.The results show that the radiation damage constants of silicon bipolar transistors are between 4×10-16cm2 and 6×10-16cm2,and for the range of linearity about current gain following neutron fluence,the collector current can be expanded to 300 mA.
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Key words:
- CFBR-II /
- Bipolar transistor /
- Neutron fluence /
- Current gain /
- Radiation damage constant
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