Measurement of Radiation Damage Constant about Bipolar Transistor of CFBR-Ⅱ

This paper describes the measurement of radiation damage constant of typical bipolar transistor of CFBR-II in a steady state,in order to acquire the radiation damage equivalent coefficient between CFBR-II and the others.The results show that the radiation damage constants of silicon bipolar transistors are between 4×10^-16cm² and 6×10^-16cm²,and for the range of linearity about current gain following neutron fluence,the collector current can be expanded to 300 mA.