Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field

QIU Dong; ZOU De-hui

Volume 31 Issue 1

Feb. 2010

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QIU Dong, ZOU De-hui. Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field[J]. Nuclear Power Engineering, 2010, 31(1): 127-130.

Citation:

QIU Dong, ZOU De-hui. Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field[J]. Nuclear Power Engineering, 2010, 31(1): 127-130.

QIU Dong, ZOU De-hui. Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field[J]. Nuclear Power Engineering, 2010, 31(1): 127-130.

Citation:

QIU Dong, ZOU De-hui. Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field[J]. Nuclear Power Engineering, 2010, 31(1): 127-130.

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Experimental Study on Irradiation Effect of Silicon Commutation Diode on CFBR-Ⅱ Neutron Field

China Academy of Engineering and Physics, MianYang, Sichuan, 621900, China

Received Date: 2009-10-10
Rev Recd Date: 2009-11-05

Available Online: 2025-07-29

Publish Date: 2010-02-01

Abstract

Abstract

The neutron irradiation damage constants of typical silicon commutation diodes have been measured, and its irradiation damage rule of forward voltage v.s. neutron flux has been verified based on CFBR-II neutron filed. The experiment results indicate that the damage constants of silicon commutation diodes range from 3×10^-15 V·cm^-2cm² to 4×10^-15 V·cm^-2, and the forward voltages grow exponentially with the neutron flux.
- Fast burst reactor,
- Silicon commutation diode,
- Irradiation effect